Thin film deposition technology

Select from a single resistance source, multiple sources, electron beam sources, RF and DC sputtering and ion beam techniques plus our matching range of substrate stages. Then choose from our system control options – we have a comprehensive capability to meet your needs. ..

Evaporation

Evaporation

The thermal evaporation of materials in vacuum is a versatile and popular method to provide a thin film coating on a substrate. In evaporation a material is heated in vacuum until it boils, the resulting vapour then condenses on the substrate to form a thin film. This film can be from a few atoms thick (less than 1nm) to hundreds or thousands of nm thick. Thermal evaporation is carried out at high vacuum, typically better than 1x10-6

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Sputtering

Sputtering

Magnetron sputtering is a highly versatile technology for thin film deposition. Running at typical pressures in the 5x10-3 mbar range  and using Ar gas, it employs a glow discharge or plasma generated by a purpose-made high negative-voltage power supply to generate gas ions which bombard the surface of a ‘target’ of the coating material. Material is then \'sputtered\' from the target due to ..

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Ion Beam Deposition

Ion Beam Deposition

Ion beam sources convert a process gas into a stream of gas ions using an external high voltage power supply and an internal cathode. The output ion beam is typically parallel or divergent, with parallel beams being used to sputter a material target with high-energy ions, and divergent beams being used to bombard a large-area work holder with lower energy ions to compact or modify the growing film during a deposition process. Ion sources are a..

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Plasma CVD

Plasma CVD

Plasma Enhanced Chemical Vapour Deposition (PECVD) is a state of the art thin film deposition technique and is widely used in semiconductor processing worldwide. In PECVD the process material is delivered in the form of a special precursor gas which is broken down a glow discharge (plasma), which transforms the gas mixture into reactive radicals, ions and other highly excited species. These species interact with a substrate and, depending on t..

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RIE and Plasma Cleaning

RIE and Plasma Cleaning

Reactive Ion Etching (RIE) is a sophisticated technique used for etching semiconductor materials with high resolution. RIE is a key enabling technology allowing semiconductor features to continue to approach the range of a few nanometres. This technology is also widely used as a machining process for nano and micro scale devices, which enable the development of MEMS and NEMS based sensor and device fabricati..

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Substrate Rotation, Heating, Cooling, RF and DC Biasing

Substrate Rotation, Heating, Cooling, RF and DC Biasing

A range of work holders covers rotation through heating, biasing, tilting and options for z-shifting for use with HHV’s load lock and transfer systems. Transferable substrate carriers are available which allow the heaters to accommodate either full size substrates or a number of small samples.

RF or DC biasing is optional for fixed and rotating models and permits both substrate..

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Film Thickness Monitoring and Process Control

Film Thickness Monitoring and Process Control

A film thickness monitor using a quartz crystal microbalance is fitted where the customer wishes to see the deposition rate and total thickness of a thin film during deposition. HHV offers these with single or dual monitor heads and manual or automated source shutters. Automatic shutters can close when a pre-set thickness is reached.

Film thickness controllers also displ..

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