Plasma CVD

Plasma CVD

Plasma Enhanced Chemical Vapour Deposition (PECVD) is a state of the art thin film deposition technique and is widely used in semiconductor processing worldwide. In PECVD the process material is delivered in the form of a special precursor gas which is broken down a glow discharge (plasma), which transforms the gas mixture into reactive radicals, ions and other highly excited species. These species interact with a substrate and, depending on the nature of these interactions, either etching or deposition processes occur at the substrate. Since the formation of the reactive and energetic species occurs by collision in the gas phase, the substrate can be maintained at a low temperature. Some of the desirable properties of PECVD films are good adhesion, low pinhole density, good step coverage, and uniformity.

HHVs Plasma Enhanced Chemical Vapour Deposition systems offer a wide range of cost effective material processes to R&D in the electronic, industrial and medical sectors. It uses a well proven design providing ease of use, with excellent process management enabling the preparation of superior quality films.